企業(yè)博客
更多>>愛(ài)普生差分晶振X1G005351002300 SG3225VEN 200M LVDS華為智能手機(jī)晶振
來(lái)源:http://www.gdsurveystar.com 作者:zhaoxiandz 2024年01月02
愛(ài)普生差分晶振X1G005351002300 SG3225VEN 200M LVDS華為智能手機(jī)晶振
華為智能手機(jī)出貨量增加是否能帶起中國(guó)晶振電子行業(yè)等
機(jī)構(gòu)預(yù)測(cè)明年華為手機(jī)出貨量增37%,預(yù)計(jì)2023年全球智能手機(jī)出貨量為近十年最低水平
Counterpoint Research對(duì)全球智能手機(jī)石英晶振出貨量預(yù)測(cè),其預(yù)計(jì)2023年全球智能手機(jī)出貨量將同比下降5%,達(dá)到12億臺(tái),為近十年最低水平.不過(guò)其預(yù)計(jì)第四季度出貨量將同比增長(zhǎng)3%,達(dá)到3.12億臺(tái).
分地區(qū)來(lái)看,北美和歐洲的出貨量預(yù)計(jì)將與去年持平.但中國(guó)和中東和非洲(MEA)、印度等新興市場(chǎng)成功扭轉(zhuǎn)頹勢(shì),從2023年第四季度起將成為智能手機(jī)市場(chǎng)的新增長(zhǎng)引擎.
中國(guó)市場(chǎng)方面,市場(chǎng)研究機(jī)構(gòu)BCI公布了中國(guó)市場(chǎng)智能手機(jī)11月(第44周-第48周)的新機(jī)激活量.數(shù)據(jù)顯示,當(dāng)月該市場(chǎng)共激活2871萬(wàn)臺(tái),同比增長(zhǎng)12.7%.其中,蘋(píng)果以21.1%的市場(chǎng)份額位列第一;小米占比18.3%位列第二,同比增長(zhǎng)44.1%;榮耀和華為以微弱的數(shù)量差分別為第三和第四,但華為同比大增75.6%.
隨著這份數(shù)據(jù)析出的還有4000元以上溫補(bǔ)晶振機(jī)型的市場(chǎng)表現(xiàn).BCI方面表示,在4000元以上的高端市場(chǎng),前三名品牌總市占率超過(guò)90%,其中,蘋(píng)果以50.8%保持第一,華為22.3%排名第二,小米14.4%名列第三位.
EPSON有源晶振,貼片差分晶振,國(guó)產(chǎn)手機(jī)晶振
需要指出的是,三者市占率的同比變化分別是-21.2%、8.8%和11.8%,這意味著國(guó)產(chǎn)高端手機(jī)正在從蘋(píng)果手中奪回更多國(guó)內(nèi)用戶.
非洲市場(chǎng)方面,研究機(jī)構(gòu)Canalys統(tǒng)計(jì),2023年第三季度非洲地區(qū)智能手機(jī)石英晶體振蕩器市場(chǎng)同比大漲12%至1790萬(wàn)部,連續(xù)兩個(gè)季度實(shí)現(xiàn)強(qiáng)勢(shì)復(fù)蘇.全球市場(chǎng)同步僅下滑1%,出貨量2.946億部,但環(huán)比增幅明顯.
非洲市場(chǎng)方面,傳音仍處于絕對(duì)領(lǐng)先地位,第三季度共出貨860萬(wàn)部,市場(chǎng)份額48%.機(jī)構(gòu)分析師表示,雖然貨幣快速貶值,但南非的智能手機(jī)市場(chǎng)仍大增20%.這主要由于入門(mén)級(jí)的需求旺盛,滿足了數(shù)量龐大的預(yù)付用戶群體.除此之外,在用電限制的帶動(dòng)下,中端機(jī)的需求也有所增加,同時(shí)人們?cè)絹?lái)越重視優(yōu)質(zhì)的屏幕和長(zhǎng)續(xù)航的智能手機(jī).
三星在非洲市場(chǎng)進(jìn)口晶振排名第二,市場(chǎng)份額26%;其次是小米,份額11%;OPPO,份額4%;realme,3%.小米和OPPO的出貨量分別同比大漲100%和259%,前五大廠商中僅三星同比下滑.
EPSON有源晶振,貼片差分晶振,國(guó)產(chǎn)手機(jī)晶振
EPSON有源晶振,貼片差分晶振,國(guó)產(chǎn)手機(jī)晶振微孔霧化片
華為智能手機(jī)出貨量增加是否能帶起中國(guó)晶振電子行業(yè)等
機(jī)構(gòu)預(yù)測(cè)明年華為手機(jī)出貨量增37%,預(yù)計(jì)2023年全球智能手機(jī)出貨量為近十年最低水平
Counterpoint Research對(duì)全球智能手機(jī)石英晶振出貨量預(yù)測(cè),其預(yù)計(jì)2023年全球智能手機(jī)出貨量將同比下降5%,達(dá)到12億臺(tái),為近十年最低水平.不過(guò)其預(yù)計(jì)第四季度出貨量將同比增長(zhǎng)3%,達(dá)到3.12億臺(tái).
分地區(qū)來(lái)看,北美和歐洲的出貨量預(yù)計(jì)將與去年持平.但中國(guó)和中東和非洲(MEA)、印度等新興市場(chǎng)成功扭轉(zhuǎn)頹勢(shì),從2023年第四季度起將成為智能手機(jī)市場(chǎng)的新增長(zhǎng)引擎.
中國(guó)市場(chǎng)方面,市場(chǎng)研究機(jī)構(gòu)BCI公布了中國(guó)市場(chǎng)智能手機(jī)11月(第44周-第48周)的新機(jī)激活量.數(shù)據(jù)顯示,當(dāng)月該市場(chǎng)共激活2871萬(wàn)臺(tái),同比增長(zhǎng)12.7%.其中,蘋(píng)果以21.1%的市場(chǎng)份額位列第一;小米占比18.3%位列第二,同比增長(zhǎng)44.1%;榮耀和華為以微弱的數(shù)量差分別為第三和第四,但華為同比大增75.6%.
隨著這份數(shù)據(jù)析出的還有4000元以上溫補(bǔ)晶振機(jī)型的市場(chǎng)表現(xiàn).BCI方面表示,在4000元以上的高端市場(chǎng),前三名品牌總市占率超過(guò)90%,其中,蘋(píng)果以50.8%保持第一,華為22.3%排名第二,小米14.4%名列第三位.
EPSON有源晶振,貼片差分晶振,國(guó)產(chǎn)手機(jī)晶振
需要指出的是,三者市占率的同比變化分別是-21.2%、8.8%和11.8%,這意味著國(guó)產(chǎn)高端手機(jī)正在從蘋(píng)果手中奪回更多國(guó)內(nèi)用戶.
非洲市場(chǎng)方面,研究機(jī)構(gòu)Canalys統(tǒng)計(jì),2023年第三季度非洲地區(qū)智能手機(jī)石英晶體振蕩器市場(chǎng)同比大漲12%至1790萬(wàn)部,連續(xù)兩個(gè)季度實(shí)現(xiàn)強(qiáng)勢(shì)復(fù)蘇.全球市場(chǎng)同步僅下滑1%,出貨量2.946億部,但環(huán)比增幅明顯.
非洲市場(chǎng)方面,傳音仍處于絕對(duì)領(lǐng)先地位,第三季度共出貨860萬(wàn)部,市場(chǎng)份額48%.機(jī)構(gòu)分析師表示,雖然貨幣快速貶值,但南非的智能手機(jī)市場(chǎng)仍大增20%.這主要由于入門(mén)級(jí)的需求旺盛,滿足了數(shù)量龐大的預(yù)付用戶群體.除此之外,在用電限制的帶動(dòng)下,中端機(jī)的需求也有所增加,同時(shí)人們?cè)絹?lái)越重視優(yōu)質(zhì)的屏幕和長(zhǎng)續(xù)航的智能手機(jī).
三星在非洲市場(chǎng)進(jìn)口晶振排名第二,市場(chǎng)份額26%;其次是小米,份額11%;OPPO,份額4%;realme,3%.小米和OPPO的出貨量分別同比大漲100%和259%,前五大廠商中僅三星同比下滑.
EPSON有源晶振,貼片差分晶振,國(guó)產(chǎn)手機(jī)晶振
差分晶振編碼 | 差分晶振型號(hào) | 差分晶振頻率 | 差分晶振尺寸 | 輸出 | 電壓 | 晶振溫度 | 晶振偏差 |
X1G0042610141 | SG5032VAN | 161.132812 MHz | 5.00 x 3.20 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to +85 °C | +/-30 ppm |
X1G0061110002 | SG2016VGN | 156.250000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0061110005 | SG2016VGN | 156.250000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-25 ppm |
X1G0061210001 | SG2016VHN | 156.250000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0061210003 | SG2016VHN | 156.250000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-20 ppm |
X1G0061210004 | SG2016VHN | 156.250000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 1.710 to 1.890 V | -40 to +105 °C | +/-20 ppm |
X1G0061210005 | SG2016VHN | 156.250000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 1.710 to 1.890 V | -40 to +85 °C | +/-20 ppm |
X1G0061210601 | SG2016VHN | 491.520000 MHz | 2.00 x 1.60 x 0.73 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0059010001 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0059010002 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +85 °C | +/-50 ppm |
X1G0059010003 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-50 ppm |
X1G0059010004 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0059010006 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-50 ppm |
X1G0059010007 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +105 °C | +/-50 ppm |
X1G0059010008 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to +105 °C | +/-50 ppm |
X1G0059010009 | SG2520VGN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0059410001 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0059410002 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-20 ppm |
X1G0059410003 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +105 °C | +/-20 ppm |
X1G0059410004 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +85 °C | +/-20 ppm |
X1G0059410005 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-20 ppm |
X1G0059410006 | SG2520VHN | 155.520000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0059410007 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +85 °C | +/-20 ppm |
X1G0059410008 | SG2520VHN | 174.703000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-20 ppm |
X1G0059410009 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.375 to 2.625 V | -40 to +105 °C | +/-20 ppm |
X1G0059410010 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0059410011 | SG2520VHN | 156.250000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +85 °C | +/-20 ppm |
X1G0059410603 | SG2520VHN | 400.000000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.970 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0059410604 | SG2520VHN | 400.000000 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 2.970 to 3.465 V | -40 to +85 °C | +/-20 ppm |
X1G0059410605 | SG2520VHN | 467.529297 MHz | 2.50 x 2.00 x 0.84 mm | LVDS | 1.710 to 1.890 V | -40 to +85 °C | +/-20 ppm |
X1G0055210001 | SG3225VEN | 212.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055210002 | SG3225VEN | 312.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055210005 | SG3225VEN | 322.265600 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055210009 | SG3225VEN | 333.330000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055210011 | SG3225VEN | 245.760000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055211007 | SG3225VEN | 322.265625 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-50 ppm |
X1G0055610002 | SG7050VEN | 312.500000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055610003 | SG7050VEN | 250.000000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0055610004 | SG7050VEN | 212.500000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-100 ppm |
X1G0053310013 | SG7050VEN | 130.000000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-25 ppm |
X1G0053310014 | SG7050VEN | 80.000000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-25 ppm |
X1G0053310015 | SG7050VEN | 125.000000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053310016 | SG7050VEN | 60.000000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053310019 | SG7050VEN | 133.333300 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053311007 | SG7050VEN | 50.000000 MHz | 7.00 x 5.00 x 1.70 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-25 ppm |
X1G0053510001 | SG3225VEN | 72.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-25 ppm |
X1G0053510002 | SG3225VEN | 125.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-25 ppm |
X1G0053510003 | SG3225VEN | 156.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.375 to 2.625 V | -40 to +85 °C | +/-25 ppm |
X1G0053510007 | SG3225VEN | 156.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-25 ppm |
X1G0053510008 | SG3225VEN | 156.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053510011 | SG3225VEN | 100.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053510012 | SG3225VEN | 125.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053510019 | SG3225VEN | 100.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-25 ppm |
X1G0053510020 | SG3225VEN | 100.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0053510021 | SG3225VEN | 148.351640 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0053510022 | SG3225VEN | 148.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0053510023 | SG3225VEN | 200.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0053510024 | SG3225VEN | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +105 °C | +/-50 ppm |
X1G0053510026 | SG3225VEN | 30.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-100 ppm |
X1G0053510027 | SG3225VEN | 36.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-100 ppm |
X1G0053510028 | SG3225VEN | 42.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-100 ppm |
X1G0053510029 | SG3225VEN | 48.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-100 ppm |
X1G0053510030 | SG3225VEN | 54.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-100 ppm |
X1G0053510031 | SG3225VEN | 60.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-100 ppm |
X1G0053510032 | SG3225VEN | 70.656000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
X1G0053510033 | SG3225VEN | 150.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 3.135 to 3.465 V | -40 to +85 °C | +/-50 ppm |
正在載入評(píng)論數(shù)據(jù)...
此文關(guān)鍵字: 愛(ài)普生差分振蕩器
相關(guān)資訊
- [2024-10-23]FCO3C012000A3CCU00 3225 12MHZ...
- [2024-10-01]FCT1M032768C5T5 FCT-1M 1610 3...
- [2024-09-20]FCX3M02700008I3L Fuji 3225 27...
- [2024-09-12]ASFLMPC-25.000MHZ-Z-T 5032 6P...
- [2024-08-13]12.8873 KX-7T 3225 26M 12PF 3...
- [2024-06-29]愛(ài)普生溫補(bǔ)晶振X1G0042010017 T...
- [2024-05-24]ConnorWinfield如何使用頻率控制...
- [2024-04-23]Abracon超小型2.0產(chǎn)品ABM13W-52...